Tunnel magnetoresistive effect element, magnetic memory, and built-in memory

ABSTRACT

A TMR element includes a magnetic tunnel junction, a side wall portion that covers a side surface of the magnetic tunnel junction, and a minute particle region that is disposed in the side wall portion. The side wall portion includes an insulation material. The minute particle region includes the insulation material and a plurality of minute magnetic metal particles that are dispersed in the insulation material. The minute particle region is electrically connected in parallel with the magnetic tunnel junction.

This is a Continuation of U.S. Pat. Application No. 17/835,458, filedJun. 8, 2022, which in turn is a Continuation of U.S. Pat. ApplicationNo. 17/089,194, filed Nov. 4, 2020, which in turn is a Continuation ofApplication No. 16,795,714, filed Feb. 20, 2020, which in turn is aContinuation of Application No. 16/082,914 filed Sep. 6, 2018, whichclaims the benefit of PCT Application No. PCT/JP2017/040293 filed Nov.8, 2017. The disclosure of the prior applications is hereby incorporatedby reference herein is its entirety.

TECHNICAL FIELD

The present disclosure relates to a tunnel magnetoresistive effectelement, a magnetic memory, and a built-in memory.

BACKGROUND ART

Magnetoresistive effect elements such as a giant magnetoresistive effect(GMR) element and a tunnel magnetoresistive effect (TMR) element havinga configuration in which a reference layer as a magnetization fixedlayer, a non-magnetic spacer layer, and a magnetization free layer arestacked in this order are known. Among the magnetoresistive effectelements, the TMR element that uses an insulation layer (tunnel barrierlayer) as the non-magnetic spacer layer generally has high elementresistance but can realize high magnetoresistance (MR ratio), comparedto the GMR element that uses a conductive layer as the non-magneticspacer layer. Thus, the TMR element has drawn attention as an elementused in a magnetic sensor, a magnetic head, a magnetoresistive randomaccess memory (MRAM), and the like (for example, Patent Literatures 1and 2 below).

A technology called “spin injection magnetization reversal” in which aspin transfer torque (STT) is applied to the magnetization free layerfrom electron spins by causing a spin-polarized current to flow throughthe magnetization free layer is known as a method of reversing themagnetization direction of the magnetization free layer of the TMRelement (for example, Patent Literatures 3 and 4 below). When the STTtechnology is used in the TMR element, an interconnect for magneticfield generation for reversing the magnetization direction of themagnetization free layer is not necessary. In addition, themagnetization of the magnetization free layer can be efficientlyreversed from the viewpoint of electrical energy.

CITATION LIST Patent Literature

-   [Patent Literature 1] Japanese Patent No. 5586028-   [Patent Literature 2] Japanese Patent No. 5988019-   [Patent Literature 3] Japanese Unexamined Patent Publication No.    2015-156501-   [Patent Literature 4] U.S. Pat. No. 8994131

SUMMARY

However, in the reversal of magnetization using the STT technology inthe TMR element, the density of a reversal current for reversingmagnetization in the TMR element is high. Thus, an excessive current maybe input into the magnetic tunnel junction. The input of the excessivecurrent particularly degrades the tunnel barrier layer in the magnetictunnel junction. Consequently, the reliability of the TMR element may bedecreased. In order to improve the reliability of the TMR element, it isdesirable to dispose a configuration that can suppress the input of theexcessive current into the magnetic tunnel junction in the TMR element.

The present disclosure is conceived in view of the above problem. Anobject of the present disclosure is to provide a TMR element that cansuppress input of an excessive current into a magnetic tunnel junction.In addition, an object of the present disclosure is to provide amagnetic memory that includes the TMR element, and a built-in memorythat includes the magnetic memory.

In order to resolve the above problem, a tunnel magnetoresistive effect(TMR) element according to one aspect of the present disclosure includesa magnetic tunnel junction, a side wall portion that covers a sidesurface of the magnetic tunnel junction, and a minute particle regionthat is disposed in the side wall portion. The side wall portionincludes an insulation material. The minute particle region includes theinsulation material and minute magnetic metal particles that aredispersed in the insulation material. The minute particle region iselectrically connected in parallel with the magnetic tunnel junction.

In the TMR element according to one aspect of the present disclosure, inthe minute particle region, the minute magnetic metal particles aredispersed in the insulation material, and most of the minute magneticmetal particles are not in contact with each other. Thus, a currentalmost does not flow through the minute particle region even though acurrent is applied to the TMR element for reversing magnetization. In acurrent range where the applied current is 0 (ampere) to a certaincurrent value, the electrical resistance value of the minute particleregion is higher than that of the magnetic tunnel junction.Consequently, in a range where the applied current for the TMR elementis 0 (ampere) to the current value, a current flows through the magnetictunnel junction, and a current that flows through the minute particleregion is maintained at almost 0 (ampere).

When the magnitude of the applied current reaches the current value, acurrent flows among the minute magnetic metal particles due to a tunneleffect in the minute particle region. When the applied current isgreater than or equal to the current value, the electrical resistancevalue of the minute particle region is lower than the electricalresistance value of the magnetic tunnel junction. Consequently, in acurrent range where the applied current for the TMR element is greaterthan or equal to the current value, the current that flows through themagnetic tunnel junction is not increased and is maintained at almost aconstant value. Meanwhile, the current that flows through the minuteparticle region is increased as the applied current is increased.

When the applied current for the TMR element reaches the current value,and the current for reversing magnetization shows a certain currentvalue in the magnetic tunnel junction, an excessive current that exceedsthe current value bypasses the magnetic tunnel junction and flowsthrough the minute particle region that is connected in parallel withthe magnetic tunnel junction. Since the current that flows through themagnetic tunnel junction can have the current value as an upper limit,the TMR element can suppress input of an excessive current into themagnetic tunnel junction.

In the TMR element according to one aspect of the present disclosure, athickness of the minute particle region may be greater than or equal to0.2 nm and less than or equal to 50 nm. Accordingly, the minute magneticmetal particles can be efficiently dispersed in the insulation material,and a favorable minute particle region can be formed.

In the TMR element according to one aspect of the present disclosure, adistance between one minute magnetic metal particle and another minutemagnetic metal particle may be greater than or equal to 0.2 nm and lessthan or equal to 10 nm. Accordingly, the tunnel effect easily occurs inthe minute particle region.

In the TMR element according to one aspect of the present disclosure, aparticle diameter of the minute magnetic metal particle may be greaterthan or equal to 0.2 nm and less than or equal to 10 nm. Accordingly,the plurality of minute magnetic metal particles can efficiently causethe tunnel effect in the minute particle region.

In the TMR element according to one aspect of the present disclosure,the minute magnetic metal particle may include at least one chemicalelement selected from the group consisting of Fe, Co, and Ni.Accordingly, since the minute magnetic metal particle has favorablemagnetic properties, the magnetic volume occupying the TMR element isincreased, and the operation of the TMR element is stabilized.

In the TMR element according to one aspect of the present disclosure,the magnetic tunnel junction may include a reference layer, a tunnelbarrier layer that is stacked on the reference layer, and amagnetization free layer that is stacked on the tunnel barrier layer.

In the TMR element according to one aspect of the present disclosure, anarea of the magnetization free layer may be smaller than an area of thetunnel barrier layer. Accordingly, in accordance with the inclination ofthe side surface of the magnetic tunnel junction, the TMR element canadjust an area in which the current for reversing magnetization bypassesthe magnetic tunnel junction and flows through the minute particleregion.

The TMR element according to one aspect of the present disclosure mayfurther include a non-magnetic layer that is disposed under thereference layer of the magnetic tunnel junction, a pinning layer that isdisposed under the non-magnetic layer, and a contact layer that isdisposed under the pinning layer. The reference layer may formantiferromagnetic coupling with the pinning layer via the non-magneticlayer. An area of the magnetization free layer may be smaller than anarea of the contact layer. Accordingly, the magnetic intensity of thepinning layer of which the magnetization direction is fixed isincreased, and a range in which the size of the minute particle regioncan be adjusted is enlarged.

In addition, a magnetic memory according to one aspect of the presentdisclosure includes any of the above-mentioned TMR elements as a storageelement.

In addition, a built-in memory according to one aspect of the presentdisclosure includes the magnetic memory.

According to the present disclosure, a TMR element that can suppressinput of an excessive current into a magnetic tunnel junction isprovided. In addition, a magnetic memory that includes the TMR element,and a built-in memory that includes the magnetic memory are provided.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a cross-sectional plan view of an MRAM that includes a TMRelement of a first embodiment.

FIG. 2 is a schematic view of a vertical cross-section of the MRAMaccording to the first embodiment.

FIG. 3 is a view illustrating the electrical connection of the MRAM ofthe first embodiment.

FIG. 4 is a cross-sectional view in the vicinity of the TMR element ofthe MRAM of the first embodiment.

Part (a) of FIG. 5 is a view illustrating a relationship between anapplied current for the TMR element according to the first embodimentand a current flowing through a magnetic tunnel junction. Part (b) ofFIG. 5 is a view illustrating a relationship between the applied currentfor the TMR element according to the first embodiment and a currentflowing through a minute particle region.

FIG. 6 is a view illustrating parallel connection in the TMR element ofthe first embodiment.

FIG. 7 is a cross-sectional view in the vicinity of a TMR element of anMRAM of a second embodiment.

FIG. 8 is a cross-sectional view in the vicinity of a TMR element of anMRAM of a third embodiment.

FIG. 9 is a cross-sectional view in the vicinity of a TMR element of anMRAM of a fourth embodiment.

FIG. 10 is a cross-sectional view in the vicinity of a TMR element of anMRAM of a fifth embodiment.

FIG. 11 is a schematic view of a vertical cross-section of an MRAMaccording to a sixth embodiment.

DESCRIPTION OF EMBODIMENTS

Hereinafter, embodiments of the present disclosure will be described indetail with reference to the appended drawings. In each drawing, thesame reference signs are used for the same elements if possible. Inaddition, the ratio of dimensions in constituents and among constituentsin the drawings is arbitrarily set for easy understanding of thedrawings.

First Embodiment

FIG. 1 is a cross-sectional plan view of a magnetic memory(magnetoresistive random access memory; MRAM) that includes aperpendicular magnetization tunnel magnetoresistive effect element (TMRelement) according to a first embodiment. FIG. 2 is a schematic view ofa vertical cross-section of the MRAM according to the first embodiment.FIG. 1 corresponds to a cross-section of an MRAM 100 taken along lineI-I in FIG. 2 . A three-dimensional orthogonal coordinate system R isillustrated in FIG. 1 and the subsequent drawings when necessary. Whenthe three-dimensional orthogonal coordinate system R is used, thethickness direction of each layer is set along a Z-axis direction, andtwo orthogonal axes that are perpendicular to the Z axis are set alongan X axis and a Y axis.

As illustrated in FIG. 1 , the MRAM 100 of the first embodiment includesa plurality of TMR elements 1 that are arranged in an array form (fiverows and five columns in FIG. 1 ) in an XY plane. Each of the pluralityof TMR elements 1 functions as a storage element of the MRAM 100. Aswill be described in detail later, each TMR element 1 includes a stackportion ST and a side wall portion 17 in which the stack portion ST isembedded. In addition, as illustrated in FIG. 2 , the MRAM 100 includesa semiconductor substrate 50, a transistor array 60, a via interconnectpart 25, an interlayer insulation layer 27, a word line WL, a TMRelement array 70 including the side wall portion 17, an upperinterconnect UL, and an insulation body 80 that covers the upper surfaceof the upper interconnect UL. In FIG. 1 and FIG. 2 , other electricalinterconnects that connect the upper interconnect UL to the transistorarray 60 are not illustrated except the word line WL.

The transistor array 60 is disposed on the principal surface of thesemiconductor substrate 50 that extends along the XY plane. The MRAM 100includes a plurality of transistors T (refer to FIG. 3 ) that aredisposed in an array form in order to drive the plurality of TMRelements 1. A plurality of the via interconnect parts 25 and a pluralityof the word lines WL are disposed on the transistor array 60. Each viainterconnect part 25 electrically connects one of the plurality oftransistors T of the transistor array 60 to the plurality of TMRelements 1 of the TMR element array 70. The plurality of viainterconnect parts 25 and the plurality of word lines WL are embedded inthe interlayer insulation layer 27 and are insulated from each other bythe interlayer insulation layer 27.

FIG. 3 is a view illustrating the electrical connection of the MRAM ofthe first embodiment. In FIG. 3 , only electrical connection related tofive TMR elements 1 of the plurality of TMR elements 1 of the TMRelement array 70 is illustrated.

As illustrated in FIG. 3 , one end of each TMR element 1 is electricallyconnected to a drain D of each transistor T, respectively. The other endof each TMR element 1 is electrically connected to a bit line BL. Thebit line BL is included in the upper interconnect UL (refer to FIG. 2 ).The gate of each transistor T is electrically connected to each wordline WL respectively, and a source S of each transistor T iselectrically connected to a source line SL. Each transistor T functionsas the storage element of the MRAM 100. One transistor T and onetransistor T electrically connected thereto constitute one memory cell.

When data is written into the memory cells of the MRAM 100, a selectionvoltage is applied to the word line WL that corresponds to the TMRelement 1 of a write target. Then, in a state where this TMR element 1is set to ON state, a voltage is applied between the bit line BL and thesource line SL such that a current of which the polarity corresponds tothe write data (“1” or “0”) flows through the TMR element 1. Themagnitude of the voltage applied at this point is set to a magnitudethat may cause spin injection magnetization reversal in a magnetizationfree layer 7 (refer to FIG. 4 ) of the TMR element 1 as will bedescribed later. Accordingly, the magnetization direction of themagnetization free layer 7 (refer to FIG. 4 ) of the TMR element 1 isset to a direction corresponding to the write data.

When data is read from the memory cells of the MRAM 100, a selectionvoltage is applied to the word line WL that corresponds to the TMRelement 1 of a read target. Then, in a state where this TMR element 1 isset to ON state, a voltage that is smaller than the voltage at the timeof writing is applied between the bit line BL and the source line SL.Accordingly, since a current of which the magnitude corresponds to datastored in the TMR element 1 flows between the bit line BL and the sourceline SL through the TMR element 1, the data is read by detecting thecurrent value.

Next, a detailed configuration of each TMR element 1 of the firstembodiment will be described. FIG. 4 is a cross-sectional view in thevicinity of the TMR element of the MRAM of the first embodiment. FIG. 4illustrates a cross-section in the vicinity of one TMR element 1 in thevertical cross-section of the MRAM 100 illustrated in FIG. 2 .

As illustrated in FIG. 4 , the TMR element 1 includes the stack portionST and the side wall portion 17. The stack portion ST is configured witha plurality of layers that are stacked along a Z-axis direction which isa stack direction. The stack portion ST includes a magnetic tunneljunction 2. For example, the stack portion ST includes a cap layer 12that is disposed on the magnetic tunnel junction 2. The magnetic tunneljunction 2 includes a reference layer 3, the magnetization free layer 7,and a tunnel barrier layer 5 that is stacked along the stack directionbetween the reference layer 3 and the magnetization free layer 7. In oneexample, in the magnetic tunnel junction 2, the tunnel barrier layer 5is stacked on the reference layer 3, and the magnetization free layer 7is stacked on the tunnel barrier layer 5. The reference layer 3 canfunction as a magnetization fixed layer. In the TMR element 1, themagnetization direction of the magnetization free layer 7 can bereversed using a spin-polarized current that flows through themagnetization free layer 7 via the tunnel barrier layer 5.

The magnetic tunnel junction 2 can further include a perpendicularmagnetization inducing layer 9. The perpendicular magnetization inducinglayer 9 imparts magnetic anisotropy along the stack direction to themagnetization free layer 7. The cap layer 12 constitutes one end of theTMR element 1. An upper electrode layer 31 is, for example, disposed onthe cap layer 12 and the side wall portion 17. The magnetic tunneljunction 2 is electrically connected to the upper electrode layer 31 viathe cap layer 12. The upper electrode layer 31 is electrically connectedto the bit line BL (refer to FIG. 3 ). The thickness of the cap layer 12is, for example, 4 to 100 nm.

For example, the stack portion ST further includes a non-magnetic layer14, a pinning layer 16, and a contact layer 18. The non-magnetic layer14 is disposed under the reference layer 3. The pinning layer 16 isdisposed under the non-magnetic layer 14. The contact layer 18 isdisposed under the pinning layer 16. The non-magnetic layer 14 is alayer that provides exchange coupling between the reference layer 3 andthe pinning layer 16. The pinning layer 16 is a layer that stronglyfixes the magnetization of the reference layer 3. The contact layer 18is a layer that is in contact with a base layer 21 and promotes thecrystallization of the pinning layer 16. In the first embodiment, thepinning layer 16, the non-magnetic layer 14, the magnetic tunneljunction 2, and the cap layer 12 constitute a mesa MS1. The mesa MS1 is,for example, formed using a method such as etching, and is acquired byperforming the etching up to the pinning layer 16. For example, the TMRelement 1 includes the base layer 21 under the contact layer 18. A lowerelectrode layer 32 is, for example, disposed under the base layer 21.The lower electrode layer 32 is electrically connected to the upperelectrode layer 31 via the base layer 21, the contact layer 18, thepinning layer 16, the non-magnetic layer 14, the magnetic tunneljunction 2, and the cap layer 12.

The side wall portion 17 covers a side surface 4 of the magnetic tunneljunction 2, and includes an insulation material. The side wall portion17 covers the side surface of the stack portion ST and electricallyinsulates the stack portion ST of the TMR element 1 from the stackportions of the other TMR elements. The insulation material is a nitridematerial such as SiN (silicon nitride), an oxynitride material such asSiON, or TaO, Al₂O₃, TiO, or AlSiO. The interlayer insulation layer 27is, for example, disposed on each side surface of the via interconnectpart 25 and the base layer 21.

In the magnetic tunnel junction 2, the tunnel barrier layer 5 can beformed of a material that induces magnetic anisotropy (perpendicularmagnetic anisotropy) in the Z-axis direction in a region of themagnetization free layer 7 in the vicinity of the interface between themagnetization free layer 7 and the tunnel barrier layer 5. Accordingly,the tunnel barrier layer 5 imparts magnetic anisotropy in a direction(perpendicular direction) along the Z axis to the magnetization freelayer 7 in cooperation with the perpendicular magnetization inducinglayer 9. When the easy magnetization axis of the magnetization freelayer 7 can be sufficiently stably directed in the direction along the Zaxis by the action and the like of the perpendicular magnetizationinducing layer 9, the tunnel barrier layer 5 may be formed of a materialthat does not induce perpendicular magnetic anisotropy in themagnetization free layer 7.

Since the easy magnetization axis of the magnetization free layer 7 isset in the direction along the Z axis, and the magnetization directionof the reference layer 3 is substantially fixed in the direction alongthe Z-axis direction, the magnetization direction of the reference layer3 is parallel or antiparallel to the magnetization direction of themagnetization free layer 7 when the magnetization free layer 7 is notsubstantially affected by an external magnetic field or an STT. Thestack portion ST in a state where the magnetization directions of thereference layer 3 and the magnetization free layer 7 are parallel toeach other has a different electrical resistance value in the Z-axisdirection from that of the stack portion ST in a state where themagnetization directions of the reference layer 3 and the magnetizationfree layer 7 are antiparallel to each other. Thus, these two statesrespectively correspond to “1” and “0” that are data of the memory cellof the MRAM 100.

The magnetization direction of the magnetization free layer 7 isreversed (that is, data is written into the memory cell in the MRAM 100)by spin injection magnetization reversal. Specifically, when themagnetization direction of the magnetization free layer 7 is reversed toa parallel state from an antiparallel state with respect to themagnetization direction of the reference layer 3, a voltage is appliedbetween one end and the other end in the Z-axis direction of the stackportion ST such that the tunnel current flows through the tunnel barrierlayer 5 in a direction from the magnetization free layer 7 toward thereference layer 3 (that is, spin-polarized electrons move toward themagnetization free layer 7 from the reference layer 3). Accordingly,from the spin-polarized electrons, the magnetization free layer 7receives a spin transfer torque in a direction in which themagnetization direction of the magnetization free layer 7 rotates towarda parallel state from an antiparallel state with respect to themagnetization direction of the reference layer 3. The magnetizationdirection of the magnetization free layer 7 is reversed by setting themagnitude of the voltage to be higher than or equal to the thresholdthat causes spin injection magnetization reversal.

Conversely, when the magnetization direction of the magnetization freelayer 7 is reversed to an antiparallel state from a parallel state withrespect to the magnetization direction of the reference layer 3, avoltage is applied between one end and the other end in the Z-axisdirection of the stack portion ST such that the tunnel current flowsthrough the tunnel barrier layer 5 in a direction from the referencelayer 3 toward the magnetization free layer 7 (that is, spin-polarizedelectrons move toward the reference layer 3 from the magnetization freelayer 7). Accordingly, from the spin-polarized electrons, themagnetization free layer 7 receives a spin transfer torque in adirection in which the magnetization direction of the magnetization freelayer 7 rotates toward an antiparallel state from a parallel state withrespect to the magnetization direction of the reference layer 3. Themagnetization direction of the magnetization free layer 7 is reversed bysetting the magnitude of the voltage to be higher than or equal to thethreshold that causes spin injection magnetization reversal.

In the first embodiment, the TMR element 1 includes a minute particleregion 20. The minute particle region 20 is disposed in the side wallportion 17. The minute particle region 20 has a granular structure andincludes an insulation material and minute magnetic metal particles 23that are dispersed in the insulation material. The insulation materialincluded in the minute particle region 20 can be the same as theinsulation material included in the side wall portion 17. The minuteparticle region 20 is, for example, formed by dispersing magnetic metalchemical elements in the insulation material constituting the side wallportion 17 using a method such as sputtering.

The minute particle region 20 extends in the side wall portion 17outside the mesa MS1. In addition, an upper end 22 of the minuteparticle region 20 is, for example, in contact with the upper electrodelayer 31, and a lower end 24 of the minute particle region 20 is incontact with the contact layer 18 that is electrically connected to thelower electrode layer 32. The upper electrode layer 31 can beelectrically connected to the lower electrode layer 32 via the minuteparticle region 20. The minute particle region 20 is electricallyconnected in parallel with the magnetic tunnel junction 2.

Part (a) of FIG. 5 is a view illustrating a relationship between anapplied current for the TMR element according to the first embodimentand a current flowing through the magnetic tunnel junction. Part (b) ofFIG. 5 is a view illustrating a relationship between the applied currentfor the TMR element according to the first embodiment and a currentflowing through the minute particle region.

As illustrated in part (a) of FIG. 5 , in a range where an appliedcurrent I₀ for the TMR element 1 is equal to 0 (ampere) to Is (ampere),a current I that flows through the magnetic tunnel junction 2 isgradually increased as the applied current I₀ is increased. When theapplied current I₀ is equal to the current value Is (ampere), thecurrent that flows through the magnetic tunnel junction 2 shows acurrent value It (ampere). In a range where the applied current I₀ isgreater than or equal to the current value Is (ampere), the current Ithat flows through the magnetic tunnel junction 2 is maintained thecurrent value It (ampere) and a value in the vicinity of the currentvalue It (ampere) with the current value It (ampere) as almost an upperlimit. The current value It (ampere) can be a current value equal to themaximum value of current that does not damage the magnetic tunneljunction 2, or less than this maximum value. In a range where theapplied current I₀ is equal to 0 (ampere) to -Is (ampere), therelationship between the applied current I₀ and the current I is thesame as the relationship between the applied current I₀ and the currentI in the range where the applied current I₀ is equal to 0 (ampere) to Is(ampere).

As illustrated in part (b) of FIG. 5 , in a range where the appliedcurrent I₀ for the TMR element 1 is equal to 0 (ampere) to Is (ampere),a current J that flows through the minute particle region 20 ismaintained at almost 0 (ampere) even when the applied current I₀ isincreased. Meanwhile, when the applied current I₀ reaches the currentvalue Is (ampere), the current J that flows through the minute particleregion 20 has a value greater than 0 (ampere). In a current range wherethe applied current I₀ is greater than the current value Is (ampere),the current J that flows through the minute particle region 20 isincreased as the applied current I₀ is increased. In a current rangewhere the applied current I₀ is greater than -Is (ampere), therelationship between the applied current I₀ and the current J is thesame as the relationship between the applied current I₀ and the currentJ in a current range where the applied current I₀ is greater than thecurrent value Is (ampere).

In the minute particle region 20, minute magnetic metal particles aredispersed in the insulation material, and most of the minute magneticmetal particles are not in contact with each other. Thus, in a rangewhere the applied current I₀ is equal to 0 (ampere) to a certain currentvalue, a current almost does not flow through the minute particle region20 even though a current is applied to the TMR element 1 for reversingmagnetization. In a current range where the applied current I₀ is equalto 0 (ampere) to the current value, the electrical resistance value ofthe minute particle region 20 is higher than the electrical resistancevalue of the magnetic tunnel junction 2. Consequently, as illustrated inpart (a) of FIG. 5 and part (b) of FIG. 5 , in a range where the appliedcurrent I₀ for the TMR element 1 is equal to 0 (ampere) to the currentvalue, that is, Is (ampere), the current I flows through the magnetictunnel junction 2, and the current J that flows through the minuteparticle region 20 is maintained at almost 0 (ampere).

When the magnitude of the applied current I₀ reaches the current valueIs, a current flows between particles among the minute magnetic metalparticles 23 due to a tunnel effect in the minute particle region 20.When the applied current I₀ is greater than or equal to the currentvalue Is, the electrical resistance value of the minute particle region20 is lower than the electrical resistance value of the magnetic tunneljunction 2. Consequently, as illustrated in part (a) of FIG. 5 and part(b) of FIG. 5 , in a current range where the applied current I₀ for theTMR element 1 is greater than or equal to Is (ampere), the current Ithat flows through the magnetic tunnel junction 2 is not increased andis maintained at almost a constant value. Meanwhile, the current J thatflows through the minute particle region 20 is increased as the appliedcurrent I₀ is increased.

Part (a) of FIG. 5 and part (b) of FIG. 5 show that when the appliedcurrent I₀ for the TMR element 1 reaches the current value Is, and themagnitude of the current for reversing magnetization becomes equal tothe current value It in the magnetic tunnel junction 2, an excessivecurrent that exceeds the current value It bypasses the magnetic tunneljunction 2 and flows through the minute particle region 20 that isconnected in parallel with the magnetic tunnel junction 2. Since thecurrent I that flows through the magnetic tunnel junction 2 can have thecurrent value It as an upper limit, the TMR element 1 can suppress inputof an excessive current into the magnetic tunnel junction 2. The currentvalue Is of the applied current can be a value that is greater than orequal to a threshold for reversing the magnetization direction of themagnetization free layer 7 by spin injection magnetization reversal andless than the current damaging the magnetic tunnel junction 2. In oneexample, the current value Is of the applied current value is 5 to 50milliamperes.

FIG. 6 is a view illustrating parallel connection in the TMR element ofthe first embodiment. The minute particle region 20 and the magnetictunnel junction 2 are electrically connected in parallel with the upperelectrode layer 31 and the lower electrode layer 32. As illustrated inFIG. 6 , a plurality of the minute magnetic metal particles 23 arepresent in a dispersed manner in the minute particle region 20. By thisdispersion, the current J that flows through the minute particle region20 is almost equal to 0 (ampere) in a current range to the current valueIs even when the applied current I₀ for the TMR element 1 is increased.Meanwhile, when the applied current I₀ exceeds the current value Is, thecurrent J flows between particles that are close to each other among theminute magnetic metal particles 23, for example, between a minutemagnetic metal particle 23 a and a minute magnetic metal particle 23 b,due to the tunnel effect. Since the current J flows through the minuteparticle region 20, the current I that flows through the magnetic tunneljunction 2 is not increased and is maintained at the current value It.In the TMR element 1, an excessive current that exceeds the currentvalue It does not flow through the magnetic tunnel junction 2, and thecurrent J that bypasses the magnetic tunnel junction 2 flows through theminute particle region 20.

FIG. 4 is referred to again. As illustrated in FIG. 4 , the minuteparticle region 20 includes an outer part 26 and an inner part 28. Adistance D1 from the inner part 28 of the minute particle region 20 tothe side surface 4 of the magnetic tunnel junction 2 along a direction(X-axis direction) intersecting with the stack direction is, forexample, a greater than or equal to 1 nm and less than or equal to 20nm. The side surface 4 of the magnetic tunnel junction 2 includes theinsulation material of the side wall portion 17 between the side surface4 and the inner part 28 of the minute particle region 20. The magnetictunnel junction 2 can be electrically connected to the upper electrodelayer 31 and the lower electrode layer 32 in parallel with the minuteparticle region 20.

A thickness W1 of the minute particle region 20 can be greater than orequal to 0.2 nm and less than or equal to 50 nm. Accordingly, the minutemagnetic metal particles can be efficiently dispersed in the insulationmaterial, and a favorable minute particle region can be formed. Thethickness W1 of the minute particle region 20 may be, for example,greater than or equal to 0.2 nm and less than or equal to 10 nm.Accordingly, the minute magnetic metal particles can be more efficientlydispersed in the insulation material, and a more favorable minuteparticle region can be formed.

In the minute particle region 20, a distance P1 (refer to FIG. 6 )between one minute magnetic metal particle 23 and another minutemagnetic metal particle 23 can be greater than or equal to 0.2 nm andless than or equal to 10 nm. The distance P1 is, for example, thedistance between one minute magnetic metal particle 23 a and anotherminute magnetic metal particle 23 b that is dispersed at a positionclosest to the one minute magnetic metal particle 23 a. In the TMRelement 1, this distance between the particles causes the tunnel effectto easily occur in the minute particle region 20. The distance betweenone minute magnetic metal particle and another minute magnetic metalparticle may be greater than or equal to 0.2 nm and less than or equalto 5 nm. Accordingly, the tunnel effect more easily occurs in the minuteparticle region 20.

When the minute particle region 20 is formed by sputtering, for example,the distance P1 between the formed minute magnetic metal particles canbe changed by adjusting the rate of forming the minute magnetic metalparticles. The rate of forming the minute magnetic metal particles is,for example, adjusted using a voltage or a gas pressure. In order to setthe distance P1 between the minute magnetic metal particles to be, forexample, greater than or equal to 0.2 nm and less than or equal to 10nm, the sputtering voltage is, for example, 0.5 to 2 kilovolts, and thesputtering time period is, for example, 1 to 10 seconds. The gaspressure of the sputtering is, for example, 0.1 Pa to 20 Pa.

The particle diameter of each minute magnetic metal particle can begreater than or equal to 0.2 nm and less than or equal to 10 nm.Accordingly, the plurality of minute magnetic metal particles canefficiently cause the tunnel effect in the minute particle region. Theparticle diameter of each minute magnetic metal particle may be greaterthan or equal to 3 nm and less than or equal to 5 nm. Accordingly, theplurality of minute magnetic metal particles can more efficiently causethe tunnel effect in the minute particle region.

In the first embodiment, in order to set the particle diameter of eachminute magnetic metal particle 23 to be, for example, greater than orequal to 0.2 nm and less than or equal to 10 nm, the sputtering voltageis, for example, 1 to 2 kilovolts, and the sputtering time period is,for example, 1 to 10 seconds. The gas pressure of the sputtering is, forexample, 0.1 Pa to 1 Pa.

Each minute magnetic metal particle can include at least one chemicalelement selected from a group consisting of Fe, Co, and Ni. Since eachminute magnetic metal particle has favorable magnetic properties, themagnetic volume occupying the TMR element 1 is increased, and theoperation of the TMR element 1 is stabilized.

In the first embodiment, in the magnetic tunnel junction 2, thereference layer 3 is formed of a ferromagnetic material such as Co, aCo-Fe alloy, or a Co-Fe-B alloy. The magnetization direction of thereference layer 3 is substantially fixed along the Z-axis direction. Thethickness of the reference layer 3 in the Z-axis direction can be, forexample, greater than or equal to 3 nm and less than or equal to 10 nm.The reference layer 3 can have a structure in which a multilayer filmsuch as Co/Pt or Co/Ni is repeatedly stacked such that the magnetizationdirection of each magnetic layer is in a perpendicular direction.

Furthermore, the reference layer 3 can have a structure in whichmagnetic fields that occur in the reference layer 3 offset each otherusing the RKKY interaction that occurs through a thin film of Ru, Ir, orthe like. This structure is a synthetic anti-ferromagnet (SAF)structure, that is, a structure that includes two ferromagnetic layersformed of a ferromagnetic material and a non-magnetic layer stackedbetween the two ferromagnetic layers in which the magnetizationdirections of the two ferromagnetic layers are coupled to each otherthrough the non-magnetic layer in antiparallel by exchange coupling thatis based on the RKKY interaction.

The tunnel barrier layer 5 is formed of an insulation material. Thetunnel barrier layer 5 is preferably configured to induce perpendicularmagnetic anisotropy in the magnetization free layer 7 based on the sameprinciple as the perpendicular magnetization inducing layer 9. Thereason is that the perpendicular magnetization of the magnetization freelayer 7 is more stable, and the film thickness of the magnetization freelayer 7 can be increased. The material constituting the tunnel barrierlayer 5 that may induce perpendicular magnetic anisotropy in themagnetization free layer 7 can be exemplified, for example, by MgO, ZnO,GaO_(x), or an oxide material that has a spinel structure represented byGeneral Formula AB₂O₄ (in the formula, A is at least one kind ofchemical element selected from a group consisting of Mg and Zn, and B isat least one kind of chemical element selected from a group consistingof Al, Ga, and In).

The tunnel barrier layer 5 may be configured not to induce perpendicularmagnetic anisotropy in the magnetization free layer 7. In this case, thetunnel barrier layer 5 can be formed of AlN_(X),Cu(In_(0.8)Ga_(0.2))Se₂, or the like.

The thickness in the Z-axis direction of the tunnel barrier layer 5 issmall such that a tunnel current flows through the tunnel barrier layer5 in the Z-axis direction when a voltage is applied between thereference layer 3 and the magnetization free layer 7. The thickness ofthe tunnel barrier layer 5 in the Z-axis direction can be, for example,greater than or equal to 1 nm and less than or equal to 3 nm.

The magnetization free layer 7 is formed of a ferromagnetic materialsuch as Fe, Co-Fe, Co-Fe-B, or a ferromagnetic Heusler alloy. Themagnetization direction of the magnetization free layer 7 issubstantially not fixed.

The thickness of the magnetization free layer 7 in the Z-axis directionis small such that the easy magnetization axis of the magnetization freelayer 7 is stably set in the direction along the Z axis by the functionof imparting magnetic anisotropy exhibited by the tunnel barrier layer 5and the perpendicular magnetization inducing layer 9 as described above.The thickness can be, for example, greater than or equal to 1 nm andless than or equal to 3 nm.

The perpendicular magnetization inducing layer 9 is, for example, formedof MgO, ZnO, Ga₂O₃, or an oxide material that has a spinel structurerepresented by General Formula AB₂O₄ (in the formula, A is at least onekind of chemical element selected from a group consisting of Mg and Zn,and B is at least one kind of chemical element selected from a groupconsisting of Al, Ga, and In).

The perpendicular magnetization inducing layer 9 is preferablyconfigured such that the resistance value of the perpendicularmagnetization inducing layer 9 along the Z-axis direction per unit areain the XY plane is smaller than that of the tunnel barrier layer 5.Particularly, when the perpendicular magnetization inducing layer 9 isformed of an insulation material, the thickness in the Z-axis directionof the perpendicular magnetization inducing layer 9 is preferablysmaller than the thickness in the Z-axis direction of the tunnel barrierlayer 5.

The perpendicular magnetization inducing layer 9 is formed of a materialthat induces magnetic anisotropy (perpendicular magnetic anisotropy) inthe direction along the Z axis in a region of the magnetization freelayer 7 in the vicinity of the interface between the magnetization freelayer 7 and the perpendicular magnetization inducing layer 9 based onthe spin-orbit interaction. Accordingly, the perpendicular magnetizationinducing layer 9 imparts magnetic anisotropy in the direction(perpendicular direction) along the Z axis to the magnetization freelayer 7 in cooperation with the tunnel barrier layer 5.

The magnetic tunnel junction 2 may not include the perpendicularmagnetization inducing layer 9. In this case, the magnetizationdirection of the reference layer 3 may be fixed in a direction (in-planedirection; that is, a direction parallel to the XY plane) thatintersects with the stack direction, and the easy magnetization axis ofthe magnetization free layer 7 may be set in the in-plane direction.

In the TMR element 1, the non-magnetic layer 14 is formed of a materialsuch as Ru or Ir, and the thickness of the non-magnetic layer 14 is, forexample, 0.2 to 3 nm. The pinning layer 16 is formed of a material suchas CoFeB or Co, and the thickness of the pinning layer 16 is, forexample, 2 to 20 nm. The contact layer 18 is formed of a material suchas Ru or Ta, and the thickness of the contact layer 18 is, for example,2 to 20 nm. The upper electrode layer 31 includes a chemical elementsuch as Al and/or Cu, and the lower electrode layer 32 includes achemical element such as Al and/or Cu.

In the first embodiment, in the magnetic tunnel junction 2, for example,the reference layer 3, the tunnel barrier layer 5, and the magnetizationfree layer 7 are stacked in this order on the upper side (in the Z-axisdirection), and the magnetization free layer 7 is positioned above thereference layer 3 and the tunnel barrier layer 5. For example, aninclination is provided such that the width of the magnetic tunneljunction 2 is monotonously decreased in a direction from the referencelayer 3 toward the magnetization free layer 7. The area of themagnetization free layer 7 can be smaller than that of the tunnelbarrier layer 5. In accordance with the inclination of the side surface4 of the magnetic tunnel junction 2, the TMR element 1 can adjust anarea in which the current for reversing magnetization bypasses themagnetic tunnel junction 2 and flows through the minute particle region20.

In the magnetic tunnel junction 2, for example, the reference layer 3can be positioned below the magnetization free layer 7 and the tunnelbarrier layer 5. Since the pinning layer 16 is disposed under thenon-magnetic layer 14, and the contact layer 18 is disposed under thepinning layer 16, the reference layer 3 can form antiferromagneticcoupling with the pinning layer 16 via the non-magnetic layer 14.Accordingly, the magnetic intensity of the pinning layer 16 of which themagnetization direction is fixed is increased. In addition, the area ofthe magnetization free layer 7 can be smaller than that of the contactlayer 18. A range in which the size of the minute particle region 20 canbe adjusted is enlarged.

In the TMR element 1, the via interconnect part 25 is formed of aconductive material. The via interconnect part 25 is, for example,formed of a metal such as Cu. The base layer 21 is formed of aconductive material. The base layer 21 is, for example, formed of aconductive oxide, a conductive nitride, a conductive oxynitride, or asilicide. Thus, the lower surface of the reference layer 3, which is oneend of the TMR element 1 of the first embodiment, is electricallyconnected to the drain D (refer to FIG. 3 ) of the transistor T throughthe base layer 21 and the via interconnect part 25.

The base layer 21 is disposed in order to improve the flatness of eachlayer of the stack portion ST, particularly, the tunnel barrier layer 5.Thus, the flatness of the upper surface of the base layer 21 is set tobe higher than the flatness of the upper surface of the via interconnectpart 25. The upper surface of the base layer 21 has high flatness andextends along the XY plane. The stack portion ST is formed on the uppersurface of the base layer 21. The via interconnect part 25 and the baselayer 21 are embedded in the interlayer insulation layer 27 and, by theinterlayer insulation layer 27, are electrically insulated from the viainterconnect parts and the base layers that are electrically connectedto the other TMR elements 1.

Second Embodiment

FIG. 7 is a cross-sectional view in the vicinity of a TMR element of anMRAM of a second embodiment, and corresponds to FIG. 4 in the firstembodiment. A TMR element 1 p of the second embodiment includes amagnetic tunnel junction 2 p and a side wall portion 17 p that covers aside surface 4 p of the magnetic tunnel junction 2 p. For example, themagnetic tunnel junction 2 p includes a reference layer 3 p, a tunnelbarrier layer 5 p on the reference layer 3 p, and a magnetization freelayer 7 p on the tunnel barrier layer 5 p. A cap layer 12 p is, forexample, disposed on the magnetic tunnel junction 2 p. In the secondembodiment, the tunnel barrier layer 5 p, the magnetization free layer 7p, and the cap layer 12 p constitute a mesa MS2. For example, the mesaMS2 is formed using a method such as etching, and is fabricated byperforming the etching up to the tunnel barrier layer 5 p. For example,the mesa MS2 has an inclination such that the width of the mesa MS2 ismonotonously decreased in a direction from a lower layer to an upperlayer.

In the TMR element 1 p, an upper electrode layer 31 p is, for example,disposed on the cap layer 12 p and the side wall portion 17 p. A baselayer 21 p is, for example, disposed under the reference layer 3 p. Alower electrode layer 32 p is, for example, disposed under the baselayer 21 p. The lower electrode layer 32 p is, for example, electricallyconnected to the upper electrode layer 31 p via the base layer 21 p, thereference layer 3 p, the tunnel barrier layer 5 p, the magnetizationfree layer 7 p, and the cap layer 12 p. The side wall portion 17 pincludes an insulation material.

A minute particle region 20 p is disposed in the side wall portion 17 p.The minute particle region 20 p has a granular structure and includes aninsulation material and minute magnetic metal particles 23 p that aredispersed in the insulation material. The insulation material of theminute particle region 20 p is, for example, the same as the insulationmaterial of the side wall portion 17 p. The minute particle region 20 pextends in the side wall portion 17 p outside the mesa MS2. For example,an upper end 22 p of the minute particle region 20 p is in contact withthe upper electrode layer 31 p, and a lower end 24 p of the minuteparticle region 20 p is in contact with the reference layer 3 p that iselectrically connected to the lower electrode layer 32 p. The upperelectrode layer 31 p can be electrically connected to the lowerelectrode layer 32 p via the minute particle region 20 p. The minuteparticle region 20 p is electrically connected in parallel with themagnetic tunnel junction 2 p. The side wall portion 17 p is includedbetween an inner part 28 p of the minute particle region 20 p and theside surface 4 p of the magnetic tunnel junction 2 p.

Third Embodiment

FIG. 8 is a cross-sectional view in the vicinity of a TMR element of anMRAM of a third embodiment, and corresponds to FIG. 4 in the firstembodiment. A TMR element 1 q of the third embodiment includes amagnetic tunnel junction (defined as 2 q) and a side wall portion 17 qthat covers a side surface 4 q of the magnetic tunnel junction 2 q. Forexample, the magnetic tunnel junction 2 q includes a reference layer 3q, a tunnel barrier layer 5 q on the reference layer 3 q, and amagnetization free layer 7 q on the tunnel barrier layer 5 q. A caplayer 12 q is, for example, disposed on the magnetic tunnel junction 2q. In the third embodiment, a part of the tunnel barrier layer 5 q, themagnetization free layer 7 q, and the cap layer 12 q constitute a mesaMS3. For example, the mesa MS3 is formed using a method such as etching,and is acquired by performing the etching up to a position in the middleof the tunnel barrier layer 5 q. For example, the mesa MS3 has aninclination such that the width of the mesa MS3 is monotonouslydecreased in a direction from a lower layer to an upper layer.

In the TMR element 1 q, an upper electrode layer 31 q is, for example,disposed on the cap layer 12 q and the side wall portion 17 q. A baselayer 21 q is, for example, disposed under the reference layer 3 q. Alower electrode layer 32 q is, for example, disposed under the baselayer 21 q. The lower electrode layer 32 q is, for example, electricallyconnected to the upper electrode layer 31 q via the base layer 21 q, thereference layer 3 q, the tunnel barrier layer 5 q, the magnetizationfree layer 7 q, and the cap layer 12 q. The side wall portion 17 qincludes an insulation material.

A minute particle region 20 q is disposed in the side wall portion 17 q.The minute particle region 20 q has a granular structure and includes aninsulation material and minute magnetic metal particles 23 q that aredispersed in the insulation material. The insulation material of theminute particle region 20 q is, for example, the same as the insulationmaterial of the side wall portion 17 q. The minute particle region 20 qextends in the side wall portion 17 q outside the mesa MS3. An upper end22 q of the minute particle region 20 q is, for example, in contact withthe upper electrode layer 31 q, and a lower end 24 q of the minuteparticle region 20 q is, for example, in contact with the tunnel barrierlayer 5 q that is electrically connected to the lower electrode layer 32q. The upper electrode layer 31 q can be electrically connected to thelower electrode layer 32 q via the minute particle region 20 q. Theminute particle region 20 q is electrically connected in parallel withthe magnetic tunnel junction 2 q. The side wall portion 17 q is includedbetween an inner part 28 q of the minute particle region 20 q and theside surface 4 q of the magnetic tunnel junction 2 q.

Fourth Embodiment

FIG. 9 is a cross-sectional view in the vicinity of a TMR element of anMRAM of a fourth embodiment, and corresponds to FIG. 4 in the firstembodiment. A TMR element 1 r of the fourth embodiment includes amagnetic tunnel junction (defined as 2 r) and a side wall portion 17 rthat covers a side surface 4 r of the magnetic tunnel junction 2 r. Forexample, the magnetic tunnel junction 2 r includes a reference layer 3r, a tunnel barrier layer 5 r on the reference layer 3 r, and amagnetization free layer 7 r on the tunnel barrier layer 5 r. A caplayer 12 r is, for example, disposed on the magnetic tunnel junction 2r. In the fourth embodiment, the magnetization free layer 7 r and thecap layer 12 r constitute a mesa MS4. For example, the mesa MS4 isformed using a method such as etching, and is fabricated by performingthe etching up to the magnetization free layer 7 r. For example, themesa MS4 has an inclination such that the width of the mesa MS4 ismonotonously decreased in a direction from a lower layer to an upperlayer.

In the TMR element 1 r, for example, an upper electrode layer 31 r isdisposed on the cap layer 12 r and the side wall portion 17 r. A baselayer 21 r is, for example, disposed under the reference layer 3 r. Alower electrode layer 32 r is, for example, disposed under the baselayer 21 r. The lower electrode layer 32 r is, for example, electricallyconnected to the upper electrode layer 31 r via the base layer 21 r, thereference layer 3 r, the tunnel barrier layer 5 r, the magnetizationfree layer 7 r, and the cap layer 12 r. The side wall portion 17 rincludes an insulation material.

A minute particle region 20 r is disposed in the side wall portion 17 r.The minute particle region 20 r has a granular structure and includes aninsulation material and minute magnetic metal particles 23 r that aredispersed in the insulation material. The insulation material of theminute particle region 20 r is, for example, the same as the insulationmaterial of the side wall portion 17 r. The minute particle region 20 rextends in the side wall portion 17 r outside the mesa MS4. For example,an upper end 22 r of the minute particle region 20 r is in contact withthe upper electrode layer 31 r, and a lower end 24 r of the minuteparticle region 20 r is in contact with the tunnel barrier layer 5 rthat is electrically connected to the lower electrode layer 32 r. Theupper electrode layer 31 r can be electrically connected to the lowerelectrode layer 32 r via the minute particle region 20 r. The minuteparticle region 20 r is electrically connected in parallel with themagnetic tunnel junction 2 r. The side wall portion 17 r is includedbetween an inner part 28 r of the minute particle region 20 r and theside surface 4 r of the magnetic tunnel junction 2 r.

Fifth Embodiment

FIG. 10 is a cross-sectional view in the vicinity of a TMR element of anMRAM of a fifth embodiment, and corresponds to FIG. 4 in the firstembodiment. A TMR element 1 s of the fifth embodiment includes amagnetic tunnel junction (defined as 2 s) and a side wall portion 17 sthat covers the side surface 4 s of the magnetic tunnel junction 2 s.For example, the magnetic tunnel junction 2 s includes a reference layer3 s, a tunnel barrier layer 5 s on the reference layer 3 s, and amagnetization free layer 7 s on the tunnel barrier layer 5 s. A caplayer 12 s is, for example, disposed on the magnetic tunnel junction 2s. A conductive layer 33 s is, for example, further disposed on the caplayer 12 s. In the fifth embodiment, a part of the tunnel barrier layer5 s, the magnetization free layer 7 s, the cap layer 12 s, and theconductive layer 33 s constitute a mesa MS5. For example, the mesa MS5is formed using a method such as etching, and is fabricated byperforming the etching up to a position in the middle of the tunnelbarrier layer 5 s. For example, the mesa MS5 has an inclination suchthat the width of the mesa MS5 is uniformly decreased in a directionfrom a lower layer to an upper layer. For example, the conductive layer33 s includes a material such as Ru, Ta, TaN, or TiN. The thickness ofthe conductive layer 33 s is, for example, 2 to 50 nm.

In the TMR element 1 s, an upper electrode layer 31 s is, for example,disposed on the cap layer 12 s and the side wall portion 17 s. A baselayer 21 s is, for example, disposed under the reference layer 3 s. Alower electrode layer 32 s is, for example, disposed under the baselayer 21 s. The lower electrode layer 32 s is, for example, electricallyconnected to the upper electrode layer 31 s via the base layer 21 s, thereference layer 3 s, the tunnel barrier layer 5 s, the magnetizationfree layer 7 s, the cap layer 12 s, and the conductive layer 33 s. Theside wall portion 17 s includes an insulation material.

A minute particle region 20 s is disposed in the side wall portion 17 s.The minute particle region 20 s has a granular structure and includes aninsulation material and minute magnetic metal particles 23 s that aredispersed in the insulation material. The insulation material of theminute particle region 20 s is, for example, the same as the insulationmaterial of the side wall portion 17 s. The minute particle region 20 sextends in the side wall portion 17 s outside the mesa MS5. For example,an upper end 22 s of the minute particle region 20 s is in contact withthe upper electrode layer 31 s, and a lower end 24 s of the minuteparticle region 20 s is in contact with the tunnel barrier layer 5 sthat is electrically connected to the lower electrode layer 32 s. Sincethe upper electrode layer 31 s can be electrically connected to thelower electrode layer 32 s via the minute particle region 20 s, theminute particle region 20 s is electrically connected in parallel withthe magnetic tunnel junction 2 s. The side wall portion 17 s is includedbetween an inner part 28 s of the minute particle region 20 s and theside surface 4 s of the magnetic tunnel junction 2 s.

Sixth Embodiment

FIG. 11 is a schematic view of a vertical cross-section of an MRAMaccording to a sixth embodiment. An MRAM 100 t according to the sixthembodiment is different from the MRAM 100 of the basic aspect of thefirst embodiment in that the MRAM 100 t further includes a processor 90.In the MRAM 100 t, an MRAM part is formed as a part of a step of formingthe circuit of the processor 90. Thus, the processor 90 and the MRAMpart of the MRAM 100 t are integrated. Thus, the MRAM 100 t is abuilt-in memory. Accordingly, the speed of data exchange between theprocessor 90 and the MRAM part is increased. The MRAM 100 t can includethe TMR elements illustrated in the first embodiment to the fifthembodiment.

REFERENCE SIGNS LIST

-   1 TMR ELEMENT-   2 MAGNETIC TUNNEL JUNCTION-   3 REFERENCE LAYER-   4 SIDE SURFACE-   5 TUNNEL BARRIER LAYER-   7 MAGNETIZATION FREE LAYER-   12 CAP LAYER-   14 NON-MAGNETIC LAYER-   16 PINNING LAYER-   17 SIDE WALL PORTION-   18 CONTACT LAYER-   20 MINUTE PARTICLE REGION-   23 MINUTE MAGNETIC METAL PARTICLE

What is claimed is:
 1. A tunnel magnetoresistive effect elementcomprising: a lower electrode layer; an upper electrode layer; a stackportion including a magnetic tunnel junction arranged between the lowerelectrode layer and the upper electrode layer; and a minute particleregion arranged outside of the magnetic tunnel junction, including aregion extending along a side surface of the stack portion, andincluding a plurality of minute metal particles dispersed in aninsulation material.
 2. The tunnel magnetoresistive effect elementaccording to claim 1, wherein a thickness of the minute particle regionis greater than or equal to 0.2 nm and less than or equal to 50 nm. 3.The tunnel magnetoresistive effect element according to claim 1, whereina distance between one minute metal particle and another minute metalparticle is greater than or equal to 0.2 nm and less than or equal to 10nm.
 4. The tunnel magnetoresistive effect element according to claim 1,wherein a particle diameter of the minute metal particle is greater thanor equal to 0.2 nm and less than or equal to 10 nm.
 5. The tunnelmagnetoresistive effect element according to claim 1, wherein the minutemetal particle includes at least one chemical element selected from thegroup consisting of Fe, Co, and Ni.
 6. The tunnel magnetoresistiveeffect element according to claim 1, wherein the magnetic tunneljunction includes a reference layer, a tunnel barrier layer stacked onthe reference layer, and a magnetization free layer stacked on thetunnel barrier layer.
 7. The tunnel magnetoresistive effect elementaccording to claim 6, wherein an area of the magnetization free layer issmaller than an area of the tunnel barrier layer.
 8. The tunnelmagnetoresistive effect element according to claim 6, furthercomprising: a non-magnetic layer disposed under the reference layer ofthe magnetic tunnel junction; a pinning layer disposed under thenon-magnetic layer; and a contact layer disposed under the pinninglayer, wherein the reference layer forms antiferromagnetic coupling withthe pinning layer via the non-magnetic layer, and an area of themagnetization free layer is smaller than an area of the contact layer.9. The tunnel magnetoresistive effect element according to claim 2,wherein a distance between one minute metal particle and another minutemetal particle is greater than or equal to 0.2 nm and less than or equalto 10 nm.
 10. The tunnel magnetoresistive effect element according claim2, wherein a particle diameter of the minute metal particle is greaterthan or equal to 0.2 nm and less than or equal to 10 nm.
 11. The tunnelmagnetoresistive effect element according claim 3, wherein a particlediameter of the minute metal particle is greater than or equal to 0.2 nmand less than or equal to 10 nm.
 12. The tunnel magnetoresistive effectelement according to claim 2, wherein the minute metal particle includesat least one chemical element selected from the group consisting of Fe,Co, and Ni.
 13. The tunnel magnetoresistive effect element according toclaim 3, wherein the minute metal particle includes at least onechemical element selected from the group consisting of Fe, Co, and Ni.14. The tunnel magnetoresistive effect element according to claim 2,wherein the magnetic tunnel junction includes a reference layer, atunnel barrier layer stacked on the reference layer, and a magnetizationfree layer stacked on the tunnel barrier layer.
 15. The tunnelmagnetoresistive effect element according to claim 3, wherein themagnetic tunnel junction includes a reference layer, a tunnel barrierlayer stacked on the reference layer, and a magnetization free layerstacked on the tunnel barrier layer.
 16. The tunnel magnetoresistiveeffect element according to claim 14, wherein an area of themagnetization free layer is smaller than an area of the tunnel barrierlayer.
 17. The tunnel magnetoresistive effect element according to claim14, further comprising: a non-magnetic layer disposed under thereference layer of the magnetic tunnel junction; a pinning layerdisposed under the non-magnetic layer; and a contact layer disposedunder the pinning layer, wherein the reference layer formsantiferromagnetic coupling with the pinning layer via the non-magneticlayer, and an area of the magnetization free layer is smaller than anarea of the contact layer.
 18. A magnetic memory comprising: the tunnelmagnetoresistive effect element according to claim 1, as a storageelement.
 19. A magnetic memory comprising: the tunnel magnetoresistiveeffect element according to claim 2, as a storage element.
 20. Abuilt-in memory comprising: the magnetic memory according to claim 18.21. The tunnel magnetoresistive effect element according to claim 1,wherein: the minute particle region is electrically parallel to themagnetic tunnel junction; and the magnetic tunnel junction and a sidewall portion covering a side surface of the magnetic tunnel junction,including the minute particle region, are configured such that onlyexcessive current above a maximum current value necessary for reversingmagnetization of the tunnel magnetoresistive effect element withoutdamaging the magnetic tunnel junction bypasses the magnetic tunneljunction and flows through the minute particle region.